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1

[IEEE 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Vienna, Austria (2020.9.13-2020.9.18)] 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) - 3300 V SiC MOSFETs with integrated Schottky rectifiers

Sundaresan, Siddarth, park, Jaehoon, Mulpuri, Vamsi, Jadav, Sumit, Singh, Ranbir

Year:

2020

File:

PDF, 1.40 MB

2020

2

Ultra-low resistivity Al+ implanted 4H–SiC obtained by microwave annealing and a protective graphite cap

Siddarth G. Sundaresan, Nadeemullah A. Mahadik, Syed B. Qadri, John A. Schreifels, Yong-Lai Tian, Qingchun Zhang, Elba Gomar-Nadal, Mulpuri V. Rao

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 416 KB

english, 2008

3

[IEEE 2012 IEEE Energy Conversion Congress and Exposition (ECCE) - Raleigh, NC, USA (2012.09.15-2012.09.20)] 2012 IEEE Energy Conversion Congress and Exposition (ECCE) - Static and switching characteristics of 6500 V Silicon Carbide Anode Switched Thyristor modules

Sundaresan, Siddarth, Soe, Aye-Mya, Singh, Ranbir

Year:

2012

Language:

english

File:

PDF, 749 KB

english, 2012

4

4H-SiC Epitaxy with Very Smooth Surface and Low Basal Plane Dislocation on 4 Degree Off-Axis Wafer

Chung, Gil Yong, Loboda, Mark J., Zhang, J., Wan, Jian Wei, Carlson, E.P., Toth, T.J., Stahlbush, Robert E., Skowronski, Marek, Berechman, R., Sundaresan, Siddarth G., Singh, Ranbir

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 999 KB

english, 2011

5

[IEEE 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Kanazawa (2013.5.26-2013.5.30)] 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - 15 kV SiC PiN diodes achieve 95% of avalanche limit and stable long-term operation

Sundaresan, Siddarth, Marripelly, Madhuri, Arshavsky, Svetlana, Singh, Ranbir

Year:

2013

Language:

english

File:

PDF, 757 KB

english, 2013

6

[IEEE 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Waikoloa, HI, USA (2014.6.15-2014.6.19)] 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Static and switching characteristics of 1200 V SiC Junction Transistors with on-chip integrated Schottky rectifiers

Sundaresan, Siddarth, Jeliazkov, Stoyan, Issa, Hany, Grummel, Brian, Singh, Ranbir

Year:

2014

Language:

english

File:

PDF, 867 KB

english, 2014

7

Fulfilling the Promise of High-Temperature Operation with Silicon Carbide Devices: Eliminating bulky thermal-management systems with SJTs

Singh, Ranbir, Sundaresan, Siddarth

Journal:

IEEE Power Electronics Magazine

Year:

2015

Language:

english

File:

PDF, 3.40 MB

english, 2015

8

Surge Current and Avalanche Robustness of Commercial 1200 V SiC Schottky Diodes

Sundaresan, Siddarth, Mulpuri, Vamsi, Singh, Ranbir

Journal:

Materials Science Forum

Year:

2019

File:

PDF, 1.52 MB

2019

9

Avalanche Robustness of 4600 V SiC DMOSFETs

Sundaresan, Siddarth, Mulpuri, Vamsi, Jeliazkov, Stoyan, Singh, Ranbir

Journal:

Materials Science Forum

Year:

2019

File:

PDF, 928 KB

2019

10

Solid-state microwave annealing of ion-implanted 4H–SiC

Siddarth G. Sundaresan, Yong-lai Tian, Mark C. Ridgway, Nadeemullah A. Mahadik, Syed B. Qadri, Mulpuri V. Rao

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2007

Language:

english

File:

PDF, 237 KB

english, 2007

11

Comparison of Solid-State Microwave Annealing with Conventional Furnace Annealing of Ion-Implanted SiC

SIDDARTH G. SUNDARESAN, MULPURI V. RAO, YONGLAI TIAN, JOHN A. SCHREIFELS, MARK C. WOOD, KENNETH A. JONES, ALBERT V. DAVYDOV

Journal:

Journal of Electronic Materials

Year:

2007

Language:

english

File:

PDF, 367 KB

english, 2007

12

Effects of microwave annealing on crystalline quality of ion-implanted SiC epitaxial layers

Nadeemullah A. Mahadik, Syed B. Qadri, Siddarth G. Sundaresan, Mulpuri V. Rao, Yonglai Tian, Qingchun Zhang

Journal:

Surface and Coatings Technology

Year:

2009

Language:

english

File:

PDF, 285 KB

english, 2009

13

Immobilization of streptavidin on 4H–SiC for biosensor development

Elissa H. Williams, Albert V. Davydov, Abhishek Motayed, Siddarth G. Sundaresan, Peter Bocchini, Lee J. Richter, Gheorghe Stan, Kristen Steffens, Rebecca Zangmeister, John A. Schreifels, Mulpuri V. Ra

Journal:

Applied Surface Science

Year:

2012

Language:

english

File:

PDF, 818 KB

english, 2012

14

[IEEE 2012 IEEE Applied Power Electronics Conference and Exposition - APEC 2012 - Orlando, FL, USA (2012.02.5-2012.02.9)] 2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC) - 1200 V SiC “Super” Junction Transistors operating at 250 °C with extremely low energy losses for power conversion applications

Singh, Ranbir, Sundaresan, Siddarth, Lieser, Eric, Digangi, Michael

Year:

2012

Language:

english

File:

PDF, 579 KB

english, 2012

15

Progress in Growth of Thick Epitaxial Layers on 4 Degree Off-Axis 4H SiC Substrates

Zhang, Jie, Chung, Gil Yong, Sanchez, Edward K., Loboda, Mark J., Sundaresan, Siddarth G., Singh, Ranbir

Journal:

Materials Science Forum

Year:

2012

Language:

english

File:

PDF, 1.60 MB

english, 2012

16

Substrate-Dependent Orientation and Polytype Control in SiC Nanowires Grown on 4H-SiC Substrates

Krishnan, Bharat, Thirumalai, Rooban Venkatesh K. G., Koshka, Yaroslav, Sundaresan, Siddarth, Levin, Igor, Davydov, Albert V., Merrett, J. Neil

Journal:

Crystal Growth & Design

Year:

2011

Language:

english

File:

PDF, 3.46 MB

english, 2011

17

Growth of Silicon Carbide Nanowires by a Microwave Heating-Assisted Physical Vapor Transport Process Using Group VIII Metal Catalysts

Sundaresan, Siddarth G., Davydov, Albert V., Vaudin, Mark D., Levin, Igor, Maslar, James E., Tian, Yong-Lai, Rao, Mulpuri V.

Journal:

Chemistry of Materials

Year:

2007

Language:

english

File:

PDF, 798 KB

english, 2007

18

[IEEE 2013 IEEE Applied Power Electronics Conference and Exposition - APEC 2013 - Long Beach, CA, USA (2013.03.17-2013.03.21)] 2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC) - 1200 V SiC Schottky rectifiers optimized for ≥ 250 °C operation with low junction capacitance

Singh, Ranbir, Sundaresan, Siddarth

Year:

2013

Language:

english

File:

PDF, 555 KB

english, 2013

19

Characterization of the Stability of Current Gain and Avalanche-Mode Operation of 4H-SiC BJTs

Sundaresan, Siddarth G., Soe, Aye-Mya, Jeliazkov, Stoyan, Singh, Ranbir

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 1.06 MB

english, 2012

20

Microwave dielectric heating of fluids in an integrated microfluidic device

Shah, Jayna J, Sundaresan, Siddarth G, Geist, Jon, Reyes, Darwin R, Booth, James C, Rao, Mulpuri V, Gaitan, Michael

Journal:

Journal of Micromechanics and Microengineering

Year:

2007

Language:

english

File:

PDF, 437 KB

english, 2007

21

Microwave annealing of Mg-implanted and in situ Be-doped GaN

Aluri, Geetha S., Gowda, Madhu, Mahadik, Nadeemullah A., Sundaresan, Siddarth G., Rao, Mulpuri V., Schreifels, John A., Freitas, J. A., Qadri, S. B., Tian, Y.-L.

Journal:

Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 1.93 MB

english, 2010

22

Silicon carbide nanowires grown on 4H-SiC substrates by chemical vapor deposition

Kotamraju, Siva, Krishnan, Bharat, Koshka, Yaroslav, Sundaresan, Siddarth, Issa, Hany, Singh, Ranbir

Journal:

MRS Proceedings

Year:

2009

Language:

english

File:

PDF, 3.10 MB

english, 2009

23

Integrated SiC Anode Switched Thyristor Modules for Smart-Grid Applications

Sundaresan, Siddarth G., Lieser, Eric, Singh, Ranbir

Journal:

Materials Science Forum

Year:

2012

Language:

english

File:

PDF, 544 KB

english, 2012

24

Stability of Electrical Characteristics of SiC “Super” Junction Transistors under Long-Term DC and Pulsed Operation at various Temperatures

Sundaresan, Siddarth G., Soe, Aye-Mya, Singh, Ranbir

Journal:

MRS Proceedings

Year:

2012

Language:

english

File:

PDF, 665 KB

english, 2012

25

Growth of SiC Nanowires on Different Planes of 4H-SiC Substrates

Thirumalai, Rooban Venkatesh K.G., Krishnan, Bharat, Levin, Igor, Davydov, Albert V., Sundaresan, Siddarth G., Merrett, Joseph Neil, Koshka, Yaroslav

Journal:

Materials Science Forum

Year:

2012

Language:

english

File:

PDF, 633 KB

english, 2012

26

Large Area >8 kV SiC GTO Thyristors with Innovative Anode-Gate Designs

Sundaresan, Siddarth G., Issa, Hany, Veereddy, Deepak, Singh, Ranbir

Journal:

Materials Science Forum

Year:

2010

Language:

english

File:

PDF, 1.22 MB

english, 2010

27

Silicon Carbide Junction Transistors and Schottky Rectifiers optimized for 250°C operation

Sundaresan, Siddarth, Grummel, Brian, Singh, Ranbir

Journal:

MRS Proceedings

Year:

2014

Language:

english

File:

PDF, 752 KB

english, 2014

28

12.9 kV SiC PiN Diodes with Low On-State Drops and High Carrier Lifetimes

Sundaresan, Siddarth G., Sturdevant, Charles, Marripelly, Madhuri, Lieser, Eric, Singh, Ranbir

Journal:

Materials Science Forum

Year:

2012

Language:

english

File:

PDF, 1.44 MB

english, 2012

29

Hybrid Si-IGBT/SiC Rectifier Co-Packs and SiC JBS Rectifiers Offering Superior Surge Current Capability and Reduced Power Losses

Sundaresan, Siddarth G., Sturdevant, Charles, Issa, H., Marripelly, Madhuri, Lieser, Eric, Singh, R.

Journal:

Materials Science Forum

Year:

2012

Language:

english

File:

PDF, 751 KB

english, 2012

30

Rapidly Maturing SiC Junction Transistors Featuring Current Gain (β) > 130, Blocking Voltages up to 2700 V and Stable Long-Term Operation

Sundaresan, Siddarth G., Jeliazkov, Stoyan, Grummel, Brian, Singh, Ranbir

Journal:

Materials Science Forum

Year:

2014

Language:

english

File:

PDF, 596 KB

english, 2014

31

Improvement of the Current Gain Stability of SiC Junction Transistors

Sundaresan, Siddarth, Grummel, Brian, Hamilton, Dean, Singh, Ranbir

Journal:

Materials Science Forum

Year:

2015

Language:

english

File:

PDF, 840 KB

english, 2015

32

Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes

Chung, Gil Yong, Loboda, Mark J., Sundaresan, Siddarth G., Singh, Ranbir

Journal:

Materials Science Forum

Year:

2010

Language:

english

File:

PDF, 404 KB

english, 2010

33

SiC Nanowires Grown on 4H-SiC Substrates by Chemical Vapor Deposition

Krishnan, Bharat, Kotamraju, Siva Prasad, Sundaresan, Siddarth G., Koshka, Yaroslav

Journal:

Materials Science Forum

Year:

2010

Language:

english

File:

PDF, 1.96 MB

english, 2010

34

Comparison of Turn-Off Strategies for SiC Thyristors

Sundaresan, Siddarth, Singh, Ranbir

Journal:

Materials Science Forum

Year:

2015

Language:

english

File:

PDF, 839 KB

english, 2015

35

[IEEE 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Blacksburg, VA, USA (2015.11.2-2015.11.4)] 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Comparison of energy losses in high-current 1700 V switches

Sundaresan, Siddarth, Grummel, Brian, Singh, Ranbir

Year:

2015

File:

PDF, 573 KB

2015

36

[IEEE 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Blacksburg, VA, USA (2015.11.2-2015.11.4)] 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Short circuit robustness of 1200 V SiC switches

Singh, Ranbir, Grummel, Brian, Sundaresan, Siddarth

Year:

2015

File:

PDF, 651 KB

2015

37

[IEEE 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Blacksburg, VA, USA (2015.11.2-2015.11.4)] 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Switching and robustness analysis of 10 kV SiC BJTs

Singh, Ranbir, Jeliazkov, Stoyan, Grummel, Brian, Sundaresan, Siddarth

Year:

2015

File:

PDF, 538 KB

2015

38

Current Gain Stability of SiC Junction Transistors Subjected to Long-Duration DC and Pulsed Current Stress

Sundaresan, Siddarth, Grummel, Brian, Singh, Ranbir

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 1.38 MB

english, 2016

39

Comparison of Energy Losses in High-Current 1700 V Switches

Sundaresan, Siddarth, Grummel, Brian, Singh, Ranbir

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 690 KB

english, 2016

40

Breakthrough performance, reliability and robustness of SiC Junction Transistors

Sundaresan, Siddarth, Singh, Ranbir

Journal:

Year:

2016

Language:

english

File:

PDF, 3.36 MB

english, 2016

41

Short Circuit Robustness of 1200 V SiC Junction Transistors and Power MOSFETs

Sundaresan, Siddarth, Grummel, Brian, Singh, Ranbir

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 757 KB

english, 2016

42

Influence of tropical cyclones on tropospheric ozone: possible implications

Das, Siddarth Shankar, Ratnam, Madineni Venkat, Uma, Kizhathur Narasimhan, Subrahmanyam, Kandula Venkata, Girach, Imran Asatar, Patra, Amit Kumar, Aneesh, Sundaresan, Suneeth, Kuniyil Viswanathan, Kum

Journal:

Atmospheric Chemistry and Physics

Year:

2016

Language:

english

File:

PDF, 4.01 MB

english, 2016

43

[IEEE 2019 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2019.3.31-2019.4.4)] 2019 IEEE International Reliability Physics Symposium (IRPS) - Avalanche and Short-Circuit Robustness of 4600 V SiC DMOSFETs

Sundaresan, Siddarth, Mulpuri, Vamsi, Jeliazkov, Stoyan, Singh, Ranbir

Year:

2019

Language:

english

File:

PDF, 1.62 MB

english, 2019

44

[IEEE 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Raleigh, NC, USA (2019.10.29-2019.10.31)] 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Characterization and Robustness Evaluation of 3.3 kV/40 mâ¦ SiC DMOSFETs

Mulpuri, Vamsi, Jadav, Sumit, Sundaresan, Siddarth, Singh, Ranbir

Year:

2019

File:

PDF, 4.40 MB

2019

45

[IEEE 2020 IEEE International Reliability Physics Symposium (IRPS) - Dallas, TX, USA (2020.4.28-2020.5.30)] 2020 IEEE International Reliability Physics Symposium (IRPS) - Reliability and Robustness Performance of 1200 V SiC DMOSFETs

Sundaresan, Siddarth, Mulpuri, Vamsi, Park, Jaehoon, Singh, Ranbir

Year:

2020

File:

PDF, 898 KB

2020

46

Investigation of Bipolar Degradation of 1.2 kV BJTs under Different Current and Temperature Conditions

Rugen, Sarah, Sundaresan, Siddarth, Singh, Ranbir, Kaminski, Nando

Journal:

Materials Science Forum

Year:

2020

File:

PDF, 507 KB

2020

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